SI-N 30V 1,5A 0,9W TO-92
Type Designator: 2SD1140
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 10
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4000
Noise Figure, dB: -
Package of 2SD1140 transistor: TO92
SI-N 30V 1,5A 0,9W TO-92
Type Designator: 2SD1140
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 10
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4000
Noise Figure, dB: -
Package of 2SD1140 transistor: TO92