SI-N 60V 12A 80W 10MHz TO-3P
Type Designator: 2SD1064R
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 12
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD1064R transistor: TO247
SI-N 60V 12A 80W 10MHz TO-3P
Type Designator: 2SD1064R
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 12
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD1064R transistor: TO247