SI-N 50V 0,05A 0,2W TO-236
Type Designator: 2SD1030
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 400
Noise Figure, dB: -
Package of 2SD1030 transistor: TO236
SI-N 50V 0,05A 0,2W TO-236
Type Designator: 2SD1030
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 400
Noise Figure, dB: -
Package of 2SD1030 transistor: TO236