SI-N 100V 0,02A 0,3W 50MHz TO-92
Type Designator: 2SD1011
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.02
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 2.2
Forward current transfer ratio (hFE), min: 400
Noise Figure, dB: -
Package of 2SD1011 transistor: TO92
SI-N 100V 0,02A 0,3W 50MHz TO-92
Type Designator: 2SD1011
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.02
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 2.2
Forward current transfer ratio (hFE), min: 400
Noise Figure, dB: -
Package of 2SD1011 transistor: TO92