SI-N 130V 3A 30W 15MHz TO-220
Type Designator: 2SD959
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 130
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 15
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD959 transistor: TO220
SI-N 130V 3A 30W 15MHz TO-220
Type Designator: 2SD959
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 130
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 15
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD959 transistor: TO220