SI-N 150V 10A 80W 12MHz TO-3P
Type Designator: 2SD923
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 12
Collector capacitance (Cc), pF: 45
Forward current transfer ratio (hFE), min: 700
Noise Figure, dB: -
Package of 2SD923 transistor: TOP3
SI-N 150V 10A 80W 12MHz TO-3P
Type Designator: 2SD923
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 12
Collector capacitance (Cc), pF: 45
Forward current transfer ratio (hFE), min: 700
Noise Figure, dB: -
Package of 2SD923 transistor: TOP3