SI-N 1500V 3,5A 50W TO-3
Type Designator: 2SD898B
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 3.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 9.5
Noise Figure, dB: -
Package of 2SD898B transistor: TO3
0F
SI-N 1500V 3,5A 50W TO-3
Type Designator: 2SD898B
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 3.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 9.5
Noise Figure, dB: -
Package of 2SD898B transistor: TO3
0F