SI-N 120V 7A 70W 5MHz TO-3P
Type Designator: 2SD896
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 70
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF: 140
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD896 transistor: TO247
0F
SI-N 120V 7A 70W 5MHz TO-3P
Type Designator: 2SD896
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 70
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF: 140
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD896 transistor: TO247
0F