SI-N 30V 1,5A 10W 60MHz TO-126
Type Designator: 2SD894
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 10
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 8000
Noise Figure, dB: -
Package of 2SD894 transistor: TO126
0F
SI-N 30V 1,5A 10W 60MHz TO-126
Type Designator: 2SD894
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 10
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 8000
Noise Figure, dB: -
Package of 2SD894 transistor: TO126
0F