SI-N 60V 1A 0,9W TO-92
Type Designator: 2SD863F
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 12
Forward current transfer ratio (hFE), min: 160
Noise Figure, dB: -
Package of 2SD863F transistor: TO92
SI-N 60V 1A 0,9W TO-92
Type Designator: 2SD863F
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 12
Forward current transfer ratio (hFE), min: 160
Noise Figure, dB: -
Package of 2SD863F transistor: TO92