SI-N 100V 1A 10W 85MHz TO-126
Type Designator: 2SD809
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 85
Collector capacitance (Cc), pF: 15
Forward current transfer ratio (hFE), min: 250
Noise Figure, dB: -
Package of 2SD809 transistor: TO126
SI-N 100V 1A 10W 85MHz TO-126
Type Designator: 2SD809
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 85
Collector capacitance (Cc), pF: 15
Forward current transfer ratio (hFE), min: 250
Noise Figure, dB: -
Package of 2SD809 transistor: TO126