SI-N 100/50V 1A 0.9W 80MHz TO-92
Type Designator: 2SD789
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD789 transistor: TO92
SI-N 100/50V 1A 0.9W 80MHz TO-92
Type Designator: 2SD789
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD789 transistor: TO92