SI-N 100V 0,05A 0,75W 350MHz TO-92
Type Designator: 2SD755E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.75
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 350
Collector capacitance (Cc), pF: 1.6
Forward current transfer ratio (hFE), min: 250
Noise Figure, dB: -
Package of 2SD755 transistor: TO92
SI-N 100V 0,05A 0,75W 350MHz TO-92
Type Designator: 2SD755E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.75
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 350
Collector capacitance (Cc), pF: 1.6
Forward current transfer ratio (hFE), min: 250
Noise Figure, dB: -
Package of 2SD755 transistor: TO92