SI-N 100V 6A 60W TO-3P
Type Designator: 2SD716
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 6
Collector capacitance (Cc), pF: 100
Forward current transfer ratio (hFE), min: 55
Noise Figure, dB: -
Package of 2SD716 transistor: TO-3P
SI-N 100V 6A 60W TO-3P
Type Designator: 2SD716
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 6
Collector capacitance (Cc), pF: 100
Forward current transfer ratio (hFE), min: 55
Noise Figure, dB: -
Package of 2SD716 transistor: TO-3P