SI-N 160V 12A 125W 4MHz TO-3
Type Designator: 2SD676A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 160
Maximum collector-emitter voltage |Uce|, V: 160
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 12
Maximum junction temperature (Tj), °C: 135
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 35
Noise Figure, dB: -
Package of 2SD676A transistor: TO3
SI-N 160V 12A 125W 4MHz TO-3
Type Designator: 2SD676A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 160
Maximum collector-emitter voltage |Uce|, V: 160
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 12
Maximum junction temperature (Tj), °C: 135
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 35
Noise Figure, dB: -
Package of 2SD676A transistor: TO3