SI-N 100V 0.05A 0,9W 70MHz TO-92
Type Designator: 2SD666A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 70
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD666A transistor: TO92
SI-N 100V 0.05A 0,9W 70MHz TO-92
Type Designator: 2SD666A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 70
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD666A transistor: TO92