SI-N 25V 1A 10W 100MHz TO-126
Type Designator: 2SC612K
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 20
Maximum collector-emitter voltage |Uce|, V: 12
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.02
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 650
Collector capacitance (Cc), pF: 2
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SC612 transistor: TO-126
SI-N 25V 1A 10W 100MHz TO-126
Type Designator: 2SC612K
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 20
Maximum collector-emitter voltage |Uce|, V: 12
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.02
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 650
Collector capacitance (Cc), pF: 2
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SC612 transistor: TO-126