SI-N 100V 1A 8W 130MHz TO-126
Type Designator: 2SD600 2SD600K 2SD600KE
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 8
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 130
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD600 transistor: TO126
- v/10 – Kr. 12,50
SI-N 100V 1A 8W 130MHz TO-126
Type Designator: 2SD600 2SD600K 2SD600KE
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 8
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 130
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD600 transistor: TO126