SI-N 60V 0,7A 0,8W
Type Designator: 2SD571L
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.7
Maximum junction temperature (Tj), °C: 150
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 90
Noise Figure, dB: -
- v/1 – Kr. 76,25
- v/10 – Kr. 62,50
- v/100 – Kr. 48,75
SI-N 60V 0,7A 0,8W
Type Designator: 2SD571L
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.7
Maximum junction temperature (Tj), °C: 150
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 90
Noise Figure, dB: -