SI-N 25V 1A 0,6W TO-92
Type Designator: 2SD545E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 180
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD545E transistor: TO92
- v/10 – Kr. 62,50
- v/20 – Kr. 50,00
SI-N 25V 1A 0,6W TO-92
Type Designator: 2SD545E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 180
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD545E transistor: TO92