SI-N 20V 1,2A 8W TO-126
Type Designator: 2SD439E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 8
Maximum collector-base voltage |Ucb|, V: 20
Maximum collector-emitter voltage |Uce|, V: 18
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1.2
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 75
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 320
Noise Figure, dB: -
Package of 2SD439 transistor: TO126
SI-N 20V 1,2A 8W TO-126
Type Designator: 2SD439E
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 8
Maximum collector-base voltage |Ucb|, V: 20
Maximum collector-emitter voltage |Uce|, V: 18
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1.2
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 75
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 320
Noise Figure, dB: -
Package of 2SD439 transistor: TO126