SI-N 120V 8A 80W TO-3
Type Designator: 2SD427
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 8
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 400
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD427 transistor: TO3
SI-N 120V 8A 80W TO-3
Type Designator: 2SD427
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 8
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 400
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD427 transistor: TO3