SI-N 120V 0,8A 5W TO-126
Type Designator: 2SD414
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD414 transistor: TO126
SI-N 120V 0,8A 5W TO-126
Type Designator: 2SD414
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD414 transistor: TO126