SI-N 100V 5A 25W TO-8
Type Designator: 2SD407
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 3000
Noise Figure, dB: -
Package of 2SD407 transistor: TO-8
SI-N 100V 5A 25W TO-8
Type Designator: 2SD407
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 3000
Noise Figure, dB: -
Package of 2SD407 transistor: TO-8