SI-N 200V 2A 30W TO-220
Type Designator: 2SD401A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 200
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD401A transistor: TO220
SI-N 200V 2A 30W TO-220
Type Designator: 2SD401A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 200
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD401A transistor: TO220