SI-N 30V 1A 0,8W TO-92
Type Designator: 2SD355
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD355 transistor: TO92
- v/10 – Kr. 5,00
- v/100 – Kr. 3,75
SI-N 30V 1A 0,8W TO-92
Type Designator: 2SD355
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SD355 transistor: TO92