NPN.80V.0,75A.0,8W.TO-126
Type Designator: 2SC1382
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.75
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 70
Noise Figure, dB: -
Package of 2SC1382 transistor: TO126
NPN.80V.0,75A.0,8W.TO-126
Type Designator: 2SC1382
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.75
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 70
Noise Figure, dB: -
Package of 2SC1382 transistor: TO126