NPN.55V.0,1A.0,4W.TO-92
Type Designator: 2SC1330
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.4
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 125
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SC1330 transistor: TO92
NPN.55V.0,1A.0,4W.TO-92
Type Designator: 2SC1330
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.4
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 125
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SC1330 transistor: TO92