NPN.40V.3A.10W.TO-202
Type Designator: 2SC1226
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 3
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 75
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SC1226 transistor: TO202
- v/10 – Kr. 7,50
- v/100 – Kr. 3,75
NPN.40V.3A.10W.TO-202
Type Designator: 2SC1226
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 3
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 75
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SC1226 transistor: TO202