NPN.35V.2,5A.10W.TO-126
Type Designator: 2SC1162C
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 35
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 180
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SC1162C transistor: TO126
NPN.35V.2,5A.10W.TO-126
Type Designator: 2SC1162C
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 35
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2.5
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 180
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of 2SC1162C transistor: TO126