NPN.180V.10A.100W.TO-3
Type Designator: 2SC1116
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 180
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SC1116 transistor: TO3
NPN.180V.10A.100W.TO-3
Type Designator: 2SC1116
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 180
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SC1116 transistor: TO3