PNP 110V 6A 60W TO3-P
Type Designator: 2SB1624
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 110
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 10000
Noise Figure, dB: -
Package of 2SB1624 transistor: TO3-P
- v/10 – Kr. 45,00
- v/20 – Kr. 37,50
PNP 110V 6A 60W TO3-P
Type Designator: 2SB1624
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 110
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 10000
Noise Figure, dB: -
Package of 2SB1624 transistor: TO3-P